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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Collector Cutoff Current | |
| Collector Dissipation | |
| Collector Emitter Saturation Voltage (Maximum @ IC =3 A, IB =0.6 A) | |
| Collector-Base Voltage | |
| Collector-Emitter Sustaining Voltage | |
| Collector-Emitter Voltage | |
| Continuous Collector Current | |
| Current | |
| Current Gain Bandwidth Product (fT) | |
| DC Current Gain (Minimum @ VCE = 5 V, IC = 0.4 A) | |
| DC Current Gain (Minimum @ Vce=5 V, Ic=2 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Mounting Type | |
| Operating Junction Temperature | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Peak Collector Current | |
| Power | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE2309 is a silicon NPN transistor designed for high voltage and high current switching applications. It features a high breakdown voltage of 800V (VCEO) and a continuous collector current rating of 12A, with a peak current capability of 25A.
This transistor boasts a current gain-bandwidth product of 15MHz and a collector-emitter saturation voltage of 2V at 3A. The operating junction temperature can reach up to 150°C, and it is available in a TO-3P package, suitable for through-hole mounting.
Key electrical characteristics include a DC current gain (hFE) of 10 at 0.4A and 8 at 2A. The device also has a collector cutoff current of 10µA and an emitter cutoff current of 10µA.
With its robust specifications, the NTE2309 is suitable for various power switching applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NTE2309 transistor is 800V.
The NTE2309 has a continuous collector current rating of 12A.
The operating junction temperature for the NTE2309 transistor is up to 150°C.
The NTE2309 transistor is supplied in a TO-3P package.