NTE2309 The NTE2309 is an NPN transistor from NTE Electronics designed for high voltage and high current switching applications. It offers a breakdown voltage of 800V and a continuous collector current of 12A.
Mfr Part #:

NTE2309

Available from 1 distributors
Mfr Name: NTE Electronics
NTE Electronics
The NTE2309 is an NPN transistor from NTE Electronics designed for high voltage and high current switching applications. It offers a breakdown voltage of 800V and a continuous collector current of 12A.
Total Stock: 4 pcs
$ Price Range: $0.99

NTE2309 Available from 1 distributor

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NTE2309 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Base-Emitter Saturation Voltage (Vbe Sat)
Collector Cutoff Current
Collector Dissipation
Collector Emitter Saturation Voltage (Maximum @ IC =3 A, IB =0.6 A)
Collector-Base Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Voltage
Continuous Collector Current
Current
Current Gain Bandwidth Product (fT)
DC Current Gain (Minimum @ VCE = 5 V, IC = 0.4 A)
DC Current Gain (Minimum @ Vce=5 V, Ic=2 A)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current
Emitter-Base Voltage
Frequency
Mounting Type
Operating Junction Temperature
Operating Temperature
Output Capacitance (Cob)
Peak Collector Current
Power
Storage Temperature Range
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NTE2309 Description

Short technical summary and product information.

The NTE2309 is a silicon NPN transistor designed for high voltage and high current switching applications. It features a high breakdown voltage of 800V (VCEO) and a continuous collector current rating of 12A, with a peak current capability of 25A.

 

This transistor boasts a current gain-bandwidth product of 15MHz and a collector-emitter saturation voltage of 2V at 3A. The operating junction temperature can reach up to 150°C, and it is available in a TO-3P package, suitable for through-hole mounting.

 

Key electrical characteristics include a DC current gain (hFE) of 10 at 0.4A and 8 at 2A. The device also has a collector cutoff current of 10µA and an emitter cutoff current of 10µA.

 

With its robust specifications, the NTE2309 is suitable for various power switching applications where high voltage and current handling are required.

NTE2309 Quick Information

Product Type: Transistor
Canonical Name: NPN Transistor
Subcategory: NPN

NTE2309 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTE2309 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTE2309 Features

  • High breakdown voltage of 800V.
  • Continuous collector current of 12A.
  • Peak collector current up to 25A.
  • Fast switching speed.
  • TO-3P package for through-hole mounting.

NTE2309 Applications

  • High voltage power switching.
  • General purpose switching applications.
  • Power supply circuits.
  • Amplifier circuits.

NTE2309 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NTE2309 transistor?

The maximum collector-emitter voltage (VCEO) for the NTE2309 transistor is 800V.

What is the continuous collector current rating of the NTE2309?

The NTE2309 has a continuous collector current rating of 12A.

What is the operating temperature range for the NTE2309 transistor?

The operating junction temperature for the NTE2309 transistor is up to 150°C.

What package type is the NTE2309 transistor supplied in?

The NTE2309 transistor is supplied in a TO-3P package.

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