| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE2308 is a single NPN bipolar junction transistor (BJT) manufactured by NTE Electronics. It is housed in a TO-3P package and designed for through-hole mounting.
Key electrical characteristics include a maximum collector-emitter voltage of 400V and a continuous collector current of 12A. The transistor has a power dissipation rating of 2.5W and a transition frequency of 20MHz. Its DC current gain (hFE) is a minimum of 15 at 1.6A and 5V, with a Vce saturation of 1V at 1.6A and 8A.
The operating temperature range for the NTE2308 is up to 150°C (TJ). This component is suitable for various electronic circuits requiring a robust NPN transistor with significant voltage and current handling capabilities.
This transistor is supplied in a TO-3P package, suitable for through-hole mounting. Environmental compliance includes RoHS3 compliance, MSL 1, and REACH unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 400V.
The continuous collector current rating is 12A.
The power dissipation is 2.5W.
The operating temperature range is up to 150°C (TJ).
The NTE2308 is an NPN transistor.
The NTE2308 is supplied in a TO-3P package.