| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | 2026-04-21 12:15:07 |
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The NTE2306 from NTE Electronics is a PNP silicon complementary transistor housed in a TO-3PN package. This device is engineered for demanding applications such as high power audio amplifiers and high voltage switching regulator circuits.
Key electrical characteristics include a high collector-emitter sustaining voltage of 160V and a continuous collector current rating of 16A. It offers a typical DC current gain (hFE) of 35 at 8A and a maximum collector-emitter saturation voltage (VCE(sat)) of 2V at 8A. The transistor can dissipate up to 125W of power at 25°C case temperature.
With an operating junction temperature range of -65°C to +150°C and a storage temperature range also from -65°C to +150°C, the NTE2306 is suitable for various environmental conditions. The TO-3PN package is designed for through-hole mounting, facilitating integration into circuit designs.
This transistor is well-suited for applications requiring robust power handling and high voltage capabilities. Its complementary nature with NPN transistors allows for versatile circuit designs in audio amplification and power supply regulation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter sustaining voltage (VCEO(sus)) is 160V.
The maximum continuous collector current (IC) is 16A.
The power dissipation (PD) is 125W at a case temperature of 25°C.
The operating junction temperature range is -65°C to +150°C.
The NTE2306 is supplied in a TO-3PN type package.
The DC current gain (hFE) is a minimum of 15 and a typical of 35 at IC = 8A and VCE = 2V.
The collector-emitter saturation voltage (VCE sat) is a maximum of 3.5V at IC = 16A and IB = 2A.