NTE2301 The NTE2301 is a silicon NPN power transistor designed for high voltage horizontal output applications. It features a 750V Collector-Emitter voltage and 5A continuous collector current.
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NTE2301

Available from 1 distributors
Mfr Name: NTE Electronics
NTE Electronics
The NTE2301 is a silicon NPN power transistor designed for high voltage horizontal output applications. It features a 750V Collector-Emitter voltage and 5A continuous collector current.
Total Stock: 4 pcs
$ Price Range: $0.99

NTE2301 Available from 1 distributor

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NTE2301 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Derate above 25°C
Frequency
Maximum Lead Temperature
Mounting Type
Operating Temperature
Operating Temperature (Minimum/Maximum @ T J)
Power
Power Dissipation (Maximum @ T_C = +25 °C)
Power Dissipation (Maximum @ T_C = 100 °C)
Safe Operating Area
Storage Temperature (Minimum/Maximum @ T stg)
Supplier Device Package
Switching Times
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
current (Maximum @ I B)
current (Maximum @ I E)
voltage (Maximum @ V CEX)
voltage (Maximum @ V EB)

NTE2301 Description

Short technical summary and product information.

The NTE2301 is a silicon NPN power transistor from NTE Electronics, housed in a TO-218 package. It is specifically designed for use in large screen deflection circuits, offering high voltage capabilities.

 

Key electrical specifications include a Collector-Emitter Voltage (V CEO) of 750V and a maximum Collector-Emitter Voltage (V CEX) of 1500V. The continuous collector current (I C) is rated at 5A, with a continuous emitter current (I E) of 9A and a continuous base current (I B) of 4A. The transistor can dissipate up to 100W of power at 25°C, with a derating of 0.8W/°C above that temperature.

 

Thermal characteristics include an operating junction temperature range of -65°C to +150°C and a junction-to-case thermal resistance of 1.25°C/W. The maximum lead temperature during soldering is 275°C. The NTE2301 also features a glassivated base-collector junction and a typical switching time (t f) of 0.4 µs with inductive loads at 4.5A.

 

This transistor is suitable for applications requiring high voltage switching and power handling. Its through-hole mounting type and TO-218 package facilitate integration into various electronic designs.

NTE2301 Quick Information

Product Type: NPN Transistor
Canonical Name: NTE2301 Silicon NPN Transistor
Subcategory: Bipolar (BJT) - Single

NTE2301 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTE2301 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTE2301 Features

  • High voltage NPN power transistor.
  • 750V Collector-Emitter voltage rating.
  • 5A continuous collector current.
  • 100W total power dissipation.
  • TO-218 package for through-hole mounting.

NTE2301 Applications

  • Suitable for high-voltage switching circuits
  • Used in power supply regulation
  • Ideal for motor control applications
  • Applicable in high-voltage amplification

NTE2301 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Collector-Emitter voltage for the NTE2301?

The maximum Collector-Emitter voltage (V CEX) for the NTE2301 is 1500V.

What is the continuous collector current rating of the NTE2301?

The NTE2301 has a continuous collector current rating of 5A.

What is the power dissipation of the NTE2301 at 25°C?

The NTE2301 has a total power dissipation of 100W at 25°C.

What is the operating temperature range for the NTE2301?

The operating junction temperature range for the NTE2301 is -65°C to +150°C.

What is the package type for the NTE2301 transistor?

The NTE2301 transistor is supplied in a TO-218 package.

How is the NTE2301 transistor mounted?

The NTE2301 transistor is mounted using the Through Hole method.

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