| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE2300 is a silicon NPN transistor manufactured by NTE Electronics, specifically designed for high-voltage applications such as large screen color TV deflection circuits. It offers a high collector-emitter voltage rating of 800V and a continuous collector current of 5A, with a peak current capability of 16A.
Key electrical characteristics include a DC current gain (hFE) of 8 minimum at 1A and 5V, and a current-gain bandwidth product (fT) of 3MHz. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 5.0V at 4A collector current and 0.8A base current. The transistor can dissipate up to 120W of power at 25°C.
This device comes in a TO-3P package and is designed for through-hole mounting. It operates within a junction temperature range of -55°C to +150°C, with a storage temperature range of the same limits. The high breakdown voltage and high switching speed make it suitable for demanding deflection circuit applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NTE2300 is 800V.
The NTE2300 has a continuous collector current rating of 5A.
The NTE2300 has a maximum power dissipation of 120W at 25°C.
The NTE2300 operates at a junction temperature up to +150°C.
The NTE2300 is supplied in a TO-3P package.
The NTE2300 is designed for through-hole mounting.