| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE225 is an NPN bipolar junction transistor (BJT) manufactured by NTE Electronics. This component is designed for applications requiring high voltage and moderate current handling capabilities. It features a collector-emitter breakdown voltage of 350V and a continuous collector current of 1A, with a power dissipation rating of 10W.
The transistor is housed in a TO-39 package with a flange, suitable for through-hole mounting. The operating temperature range is from -65°C to 200°C (TJ). Key electrical characteristics include a minimum DC current gain (hFE) of 3 at 10mA and 10V, and a maximum collector-emitter saturation voltage of 500mV at 4mA and 50mA.
This NTE225 transistor is RoHS3 compliant and has an MSL rating of 1. Its through-hole mounting type makes it suitable for various electronic circuits where robust component mounting is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (V(BR)CEO) for the NTE225 is 350V.
The NTE225 can handle a maximum continuous collector current (I(C)) of 1A.
The NTE225 has a power dissipation rating of 10W.
The NTE225 operates within a temperature range of -65°C to 200°C (TJ).
The NTE225 is available in a TO-39 package with a flange.
The NTE225 is Lead free/RoHS Compliant.