| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE224 is an RF NPN transistor manufactured by NTE Electronics, designed for applications requiring high-frequency signal amplification. It features a maximum voltage rating of 60V and can handle a continuous current of 2A. The transistor operates at frequencies up to 300MHz, with a power dissipation capability of 10W.
This component is housed in a TO-39 package with a flange and is designed for through-hole mounting. The DC current gain (hFE) is a minimum of 10 at 500mA and 5V. The operating junction temperature can reach up to 175°C.
Key electrical characteristics include a 60V collector-emitter voltage and a 2A collector current. Its 300MHz frequency capability makes it suitable for various RF circuits. The TO-39 package is a standard for many through-hole electronic components.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE224 transistor has a maximum voltage rating of 60V.
The NTE224 can handle a maximum continuous current of 2A.
The NTE224 operates at frequencies up to 300MHz.
The NTE224 transistor is supplied in a TO-39 package with a flange.
The NTE224 transistor is designed for through-hole mounting.
The minimum DC current gain (hFE) for the NTE224 is 10 at 500mA and 5V.
The NTE224 has an operating junction temperature of up to 175°C.