| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE221 from NTE Electronics is an N-channel depletion type, dual-insulated gate MOSFET utilizing MOS construction. It is specifically designed for applications in VHF TV receivers, offering characteristics highly desirable for RF amplifier use.
Key electrical specifications include a Drain-to-Source Voltage (VDS) range of 0 to 20V and a maximum Transistor Dissipation (PT) of 400mW at 25°C. The device exhibits a Forward Transconductance (gfs) of 1000 µmhos at 1kHz and features low feedback capacitance and high power gain.
Packaged in a TO-72 metal can, the NTE221 is suitable for through-hole mounting. Its operating ambient temperature range is -65°C to +175°C, with a storage temperature range also from -65°C to +175°C.
This MOSFET is well-suited for RF amplifier applications within VHF frequency ranges, providing reliable performance for its intended use in TV receiver circuitry.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-to-Source Voltage (VDS) for the NTE221 is 20V.
The typical Forward Transconductance (gfs) of the NTE221 at 1kHz is 1000 µmhos.
The NTE221 MOSFET is supplied in a TO-72 package.
The operating ambient temperature range for the NTE221 is -65°C to +175°C.