NTE221 The NTE221 is an N-channel MOSFET designed for VHF TV receiver applications. It features a TO-72 package and offers high power gain.
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NTE221

Available from 1 distributors
Mfr Name: NTE Electronics
NTE Electronics
The NTE221 is an N-channel MOSFET designed for VHF TV receiver applications. It features a TO-72 package and offers high power gain.
✓ Total Stock: 4 pcs
$ Price Range: $0.99

NTE221 Available from 1 distributor

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4 pcs
4 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request

NTE221 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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NTE221 Description

Short technical summary and product information.

The NTE221 from NTE Electronics is an N-channel depletion type, dual-insulated gate MOSFET utilizing MOS construction. It is specifically designed for applications in VHF TV receivers, offering characteristics highly desirable for RF amplifier use.

 

Key electrical specifications include a Drain-to-Source Voltage (VDS) range of 0 to 20V and a maximum Transistor Dissipation (PT) of 400mW at 25°C. The device exhibits a Forward Transconductance (gfs) of 1000 µmhos at 1kHz and features low feedback capacitance and high power gain.

 

Packaged in a TO-72 metal can, the NTE221 is suitable for through-hole mounting. Its operating ambient temperature range is -65°C to +175°C, with a storage temperature range also from -65°C to +175°C.

 

This MOSFET is well-suited for RF amplifier applications within VHF frequency ranges, providing reliable performance for its intended use in TV receiver circuitry.

NTE221 Quick Information

Product Type: MOSFET RF Transistor
Canonical Name: NTE221 Dual Gate N-Channel MOSFET
Subcategory: RF Transistor

NTE221 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTE221 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTE221 Features

  • N-channel depletion type MOSFET.
  • Designed for VHF TV receiver applications.
  • Features low feedback capacitance.
  • Offers high power gain.
  • Packaged in TO-72 metal can.

NTE221 Applications

  • Suitable for RF amplifier applications in VHF range.
  • Used in TV receiver signal processing circuits.
  • Ideal for high-frequency RF switching and mixing.
  • Applicable in low-power RF signal modulation circuits.

NTE221 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-to-Source Voltage for the NTE221?

The maximum Drain-to-Source Voltage (VDS) for the NTE221 is 20V.

What is the typical Forward Transconductance of the NTE221 at 1kHz?

The typical Forward Transconductance (gfs) of the NTE221 at 1kHz is 1000 µmhos.

What package type is the NTE221 MOSFET supplied in?

The NTE221 MOSFET is supplied in a TO-72 package.

What is the operating temperature range for the NTE221?

The operating ambient temperature range for the NTE221 is -65°C to +175°C.

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