| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE Electronics NTE214 is a single NPN Darlington bipolar junction transistor (BJT) suitable for various electronic applications. It features a maximum collector-emitter breakdown voltage of 60V and can handle a continuous collector current of up to 10A.
With a maximum power dissipation of 2.5W, this transistor operates efficiently within a temperature range of 150°C (TJ). Its DC current gain (hFE) is a minimum of 2000 at 5A and 2V, with a Vce saturation of 1.5V at 10mA and 5A. The transition frequency is 20MHz.
The NTE214 is supplied in a TO-3P package and is designed for through-hole mounting. Its RoHS status is compliant, and it is classified under MSL 1 Unlimited and REACH Unaffected.
This component is ideal for applications requiring high current gain and switching capabilities. Its robust construction and specifications make it a reliable choice for power control and amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE214 has a maximum collector-emitter breakdown voltage of 60V.
The NTE214 can handle a maximum continuous collector current of 10A.
The NTE214 has a maximum power dissipation of 2.5W.
The NTE214 operates at a maximum junction temperature of 150°C.
The NTE214 is an NPN Darlington transistor.
The NTE214 is supplied in a TO-3P package.