| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE198 is a bipolar junction transistor (BJT) of the NPN type manufactured by NTE Electronics. It is rated for a maximum collector-emitter voltage of 400V and a continuous collector current of 1A, with a power dissipation of 2W. This transistor is suitable for high voltage amplification and switching tasks.
The NTE198 features a DC current gain (hFE) of at least 30 at 300mA and 10V, and a Vce saturation of 1V at 200mA and 1A. It operates within a temperature range of -65°C to 150°C.
Packaged in a TO-220 configuration, the NTE198 is designed for through-hole mounting. Its specifications make it a versatile component for various electronic circuits requiring high voltage handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage for the NTE198 is 400V.
The NTE198 transistor has a maximum collector current of 1A.
The NTE198 has a power dissipation of 2W.
The operating temperature range for the NTE198 is -65°C to 150°C.
The NTE198 is supplied in a TO-220-3 package.
The NTE198 transistor is mounted using the through-hole method.