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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE Electronics NTE197 is a single PNP bipolar junction transistor (BJT) housed in a TO-220 package. This device is rated for a maximum collector-emitter voltage of 70V and a continuous collector current of 7A, with a power dissipation capability of 40W. It operates within a temperature range of -65°C to 150°C (TJ).
The transistor features a DC current gain (hFE) of at least 30 at 2A and 4V, and a Vce saturation of 3.5V maximum at 3A and 7A. Its frequency response extends to 10MHz.
Designed for through-hole mounting, the NTE197 is suitable for various electronic circuits requiring a robust PNP transistor. Its specifications make it a reliable choice for amplification and switching applications in power electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE197 transistor has a collector-emitter voltage rating of 70V.
The NTE197 can handle a maximum continuous collector current of 7A.
The NTE197 transistor has a power dissipation rating of 40W.
The NTE197 operates within a temperature range of -65°C to 150°C (TJ).
The NTE197 transistor is supplied in a TO-220 package.
The NTE197 transistor is designed for through-hole mounting.