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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5 pcs
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5 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector Current | |
| Collector Cutoff Current (Maximum @ VCE = 60 V, IB = 0) | |
| Collector Cutoff Current (Maximum @ VCE = 80 V, VEB(off) = 1.5 V, TC = +150 °C) | |
| Collector Cutoff Current (Maximum @ Vce=80 V, Veb(off)=1.5 V) | |
| Collector-Base Voltage | |
| Collector-Emitter Sustaining Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| Current Gain Bandwidth Product (fT) | |
| DC Current Gain (Minimum @ IC = 7 A, VCE = 4 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Junction Temperature | |
| Operating Temperature | |
| Power | |
| Power Dissipation Derating | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Thermal Resistance - Junction to Case | |
| Total Power Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE196 is a silicon NPN transistor manufactured by NTE Electronics, suitable for general purpose amplifier and switching applications. It is housed in a TO-220 package and offers a collector-emitter sustaining voltage of 70V.
Key electrical characteristics include a continuous collector current of 7A and a peak collector current of 10A. The DC current gain (hFE) is specified up to 30 minimum at 2A, VCE 4V, and 2.3 minimum at 7A, VCE 4V. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 3.5V at 3A base current and 7A collector current.
This transistor operates within a junction temperature range of -65°C to +150°C and has a total power dissipation of 40W at 25°C case temperature. The thermal resistance from junction to case is 3.125°C/W.
Designed for through-hole mounting, the NTE196 is a complementary part to the NTE197 PNP transistor. Its robust specifications make it suitable for various audio power output and medium power switching tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter sustaining voltage (VCEO(sus)) for the NTE196 is a minimum of 70V.
The NTE196 transistor has a maximum continuous collector current of 7A.
The NTE196 transistor is supplied in a TO-220-3 package.
The NTE196 transistor is designed for through-hole mounting.
The operating junction temperature range for the NTE196 is -65°C to +150°C.
The total power dissipation for the NTE196 is 40W at a case temperature of 25°C.
The DC current gain (hFE) of the NTE196 is a minimum of 30 at an IC of 2A and VCE of 4V.