| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Efficiency | |
| Gain | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Voltage |
The NTE195A is a silicon NPN transistor specifically designed for use in large-signal output amplifier stages. It is intended for applications in Citizen-Band (CB) communications equipment operating up to 30MHz. The transistor features high breakdown voltages, allowing for a high percentage of up-modulation in AM circuits.
Key electrical characteristics include a collector-emitter breakdown voltage of 70V and a continuous collector current of 1.5A. The device has a total power dissipation of 8W at +25°C. At a specified condition of 12.5V and 28MHz, it can achieve a power output of 3.5W with a power gain of 10dB and an efficiency of 70% typical.
This RF transistor is housed in a TO-39 metal can package and is designed for through-hole mounting. Its specifications make it suitable for RF power amplification and driver stages in communication systems.
Electrical characteristics include a minimum DC current gain (hFE) of 30 at 400mA and 2V. Dynamic characteristics include an output capacitance (Cob) of 70pF maximum at 1MHz. The transistor also offers a typical percent up-modulation of 85% at 27MHz.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (V(BR)CES) for the NTE195A is 70V.
The maximum continuous collector current (IC) for the NTE195A is 1.5A.
The total device dissipation (PD) for the NTE195A is 8W at +25°C.
The NTE195A is supplied in a TO-205AD, TO-39-3 Metal Can package.
The NTE195A is a through-hole mount component.
The minimum DC current gain (hFE) is 30 at 400mA and 2V.
The typical power gain (GPE) at 28MHz is 10dB.