BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| SVHC Present |
The NTE189 is a PNP silicon transistor manufactured by NTE Electronics, suitable for general-purpose, high voltage amplifier, and driver applications. It is housed in a TO-202N package.
Key electrical characteristics include a collector-emitter breakdown voltage of 80V at 1mA and a continuous collector current of up to 2A. The device can dissipate up to 10W of power at a case temperature of +25°C. The operating and storage temperature range is from -55°C to +150°C.
This transistor is designed for applications requiring high voltage handling. Its complementary NPN counterpart is the NTE188. The thermal resistance from junction to case is 12.5°C/W, indicating efficient heat dissipation when properly mounted.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NTE189 is 80V.
The NTE189 has a continuous collector current (IC) rating of 2A.
The NTE189 can dissipate a maximum of 10W at a case temperature of +25°C.
The NTE189 operates within a temperature range of -55°C to +150°C.
The NTE189 is supplied in a TO-202N package.
The DC current gain (hFE) for the NTE189 at IC = 50mA and VCE = 1V is a minimum of 80 and a maximum of 160.