| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE186 is a single NPN bipolar junction transistor manufactured by NTE Electronics, Inc. It features a maximum collector-emitter breakdown voltage of 60V and can handle a continuous collector current of up to 3A. The transistor has a maximum power dissipation of 2.1W and a transition frequency of 50MHz.
Designed for through-hole mounting, the NTE186 utilizes the TO-202 package. Its operating temperature range is from -55°C to 150°C (TJ). Key electrical characteristics include a Vce saturation of 500mV maximum at 50mA collector current and 1V, and a minimum DC current gain (hFE) of 100 at 200mA collector current and 1V.
This component is suitable for various general-purpose amplification and switching applications where its voltage and current ratings are appropriate. The through-hole package facilitates easy integration into breadboards or traditional PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 60 V.
The maximum continuous collector current is 3 A.
The operating temperature range is -55°C to 150°C (TJ).
The NTE186 is supplied in a TO-202 Long Tab package.
The NTE186 transistor is designed for through-hole mounting.