| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE185 is a PNP silicon complementary transistor manufactured by NTE Electronics, designed for applications in power amplifier and switching circuits. It is housed in a TO-126 plastic package, also referred to as TO-225AA or TO-126-3, and is suitable for through-hole mounting.
This transistor offers a maximum collector-emitter voltage (VCEO) of 80V and a maximum collector current (IC) of 4A. Its DC current gain (hFE) is a minimum of 20 at 1.5A and 2V, and a minimum of 7 at 4A and 2V. The saturation voltage (VCE(sat)) is a maximum of 0.6V at 1.5A/0.15A and 1.4V at 4A/1A. The frequency response is characterized by a current gain-bandwidth product (fT) of 2MHz minimum at 1A/10V.
Key electrical characteristics include a base current (IB) up to 1A and an emitter-base voltage (VEB) of 5V. The device operates within a junction temperature range of -65°C to +150°C and has a total power dissipation of 40W at 25°C. Thermal resistance from junction to case (RthJC) is 3.12°C/W.
This transistor is designed with excellent safe area limits, making it robust for power applications. Its complementary nature with NPN transistors allows for versatile circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NTE185 transistor is 80V.
The NTE185 transistor can handle a maximum continuous collector current of 4A.
The NTE185 transistor operates within a temperature range of -65°C to +150°C.
The NTE185 transistor is supplied in a TO-126 package.
The minimum DC current gain (hFE) of the NTE185 at 1.5A and 2V is 20.
The maximum collector-emitter saturation voltage (VCE(sat)) for the NTE185 at 4A and 1A is 1.4V.