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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter On Voltage (VBEon) | |
| Current | |
| Current Gain Bandwidth Product (fT) | |
| DC Current Gain (Minimum @ Ic=10 A, Vce=4 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Leakage Current (Maximum @ VBE = 5 V, IC = 0) | |
| Leakage Current (Maximum @ VCB = 70 V, IE = 0) | |
| Leakage Current (Maximum @ VCB = 70 V, IE = 0, TC = +150 °C) | |
| Leakage Current (Maximum @ VCE = 30 V, IB = 0) | |
| Leakage Current (Maximum @ VCE = 70 V, VBE(off) = 1.5 V) | |
| Leakage Current (Maximum @ VCE = 70 V, VBE(off) = 1.5 V, TC = +150 °C) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Saturation Voltage (Maximum @ IC = 4 A, IB = 400 mA) | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Total Device Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE Electronics NTE183 is a PNP silicon transistor designed for general purpose amplifier and switching applications. It is housed in a TO-127 type case and offers through-hole mounting.
Key electrical specifications include a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 10A. The device boasts a DC current gain (hFE) of 20 minimum at 4A and 4V, and 5.0 minimum at 10A and 4V. Its gain-bandwidth product (fT) is a minimum of 2MHz at 500mA.
The transistor operates within a junction temperature range of -55°C to +150°C and has a total device dissipation (PD) of 90W at 25°C. The thermal resistance from junction to case (RthJC) is 1.39°C/W.
This component is suitable for various amplifier and switching circuits where its power and current handling capabilities are beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the NTE183 transistor is 60V.
The maximum continuous collector current (IC) for the NTE183 transistor is 10A.
The NTE183 transistor uses a TO-225AB, TO-127-3 package.
The operating junction temperature range for the NTE183 transistor is -55°C to +150°C.
The DC current gain (hFE) of the NTE183 at 4A and 4V is a minimum of 20.
The gain-bandwidth product (fT) for the NTE183 at 500mA is a minimum of 2MHz.