| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE Electronics NTE181 is a single NPN bipolar junction transistor (BJT) housed in a TO-3 package. This device is rated for a collector-emitter voltage (Vce) of 100V and can handle a continuous collector current (Ic) of up to 30A. With a power dissipation of 200W, it is suitable for demanding applications requiring robust performance.
The transistor offers a DC current gain (hFE) of at least 25 at 7.5A and 2V. Its saturation voltage (Vce(sat)) is a maximum of 800mV at 750mA and 7.5A, indicating efficient switching characteristics. The operating temperature range is broad, from -65°C to 200°C (TJ), making it suitable for various environmental conditions.
Featuring a through-hole mounting type, the NTE181 is designed for easy integration into circuit boards. Its TO-3 metal can package provides good thermal dissipation. This transistor is a reliable choice for power switching, amplification, and general-purpose high-current applications in industrial and commercial equipment.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE181 has a maximum collector-emitter voltage of 100V.
The NTE181 can handle a continuous current of up to 30A.
The NTE181 has a power dissipation rating of 200W.
The NTE181 operates in a temperature range of -65°C to 200°C (TJ).
The NTE181 is an NPN bipolar junction transistor.
The NTE181 is supplied in a TO-3 package.