| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE180 is a PNP silicon power transistor manufactured by NTE Electronics, housed in a TO-3 package. This component is designed for use as an output device in complementary audio amplifiers, capable of delivering up to 100 watts of music power per channel.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 90V and a maximum collector current (IC) of 30A. It features a high DC current gain (hFE) ranging from 25 to 100 at 7.5A, and a saturation voltage (Vce(sat)) of 800mV at 7.5A. The transition frequency (ft) is typically 2MHz.
With a power dissipation (Pd) rating of 200W, the NTE180 is suitable for demanding applications. The operating temperature range is -65°C to 200°C (TJ). The transistor is mounted via a through-hole method.
This device is RoHS3 compliant and has an MSL rating of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE180 has a collector-emitter voltage (VCEO) of 90V and a collector-emitter voltage (VCER) of 100V.
The NTE180 is supplied in a TO-3 package.
The operating temperature range for the NTE180 is -65°C to 200°C (TJ).
Yes, the NTE180 is RoHS3 compliant.
The maximum continuous collector current for the NTE180 is 30A.
The NTE180 has a power dissipation rating of 200W.