| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE18 is an NPN bipolar junction transistor designed for general-purpose switching and amplification applications. It features a collector-emitter breakdown voltage of 80V minimum and a continuous collector current rating of 700mA, with pulse capability up to 1A. The device provides a DC current gain (hFE) ranging from 120 to 270 at VCE = 3V and IC = 100mA, ensuring consistent performance across varying loads.
With a transition frequency of 120MHz, the NTE18 is suitable for low to medium frequency circuits. The collector-emitter saturation voltage is typically 200mV at IC = 500mA and IB = 50mA, contributing to efficient switching. The transistor can dissipate up to 1W and operates over a junction temperature range of -55°C to +135°C, making it robust for industrial environments.
The NTE18 is housed in a standard through-hole package, compatible with common PCB layouts. Its electrical characteristics make it a reliable choice for signal amplification, driver stages, and low-power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (V(BR)CEO) is 80V at IC = 2mA.
The continuous collector current (IC) is 700mA, with a pulse rating of 1A.
The DC current gain (hFE) ranges from 120 to 270 at VCE = 3V and IC = 100mA.
The typical transition frequency (fT) is 120MHz at VCE = 10V and IC = 50mA.
The junction temperature range is -55°C to +135°C, and the storage temperature range is -55°C to +135°C.