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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE175 is a single NPN bipolar junction transistor (BJT) manufactured by NTE Electronics. This component is designed for through-hole mounting and comes in a TO-66 package.
Key electrical specifications include a maximum voltage rating of 300V and a maximum continuous collector current of 2A. It can dissipate up to 35W of power and operates at frequencies up to 15MHz. The transistor exhibits a minimum DC current gain (hFE) of 40 at 100mA and 10V, with a saturation voltage (Vce) of 750mV at 125mA and 1A.
The operating temperature range for the NTE175 is -65°C to 200°C (TJ). It is specified with RoHS3 compliance and an MSL 1 rating.
This transistor is suitable for various general-purpose amplification and switching applications where its voltage and current ratings are appropriate.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum voltage for the NTE175 transistor is 300 V.
The NTE175 transistor can handle a maximum continuous current of 2 A.
The NTE175 transistor has a power dissipation rating of 35 W.
The NTE175 transistor operates between -65°C and 200°C (TJ).
The NTE175 is available in a TO-213AA, TO-66-2 package, also referred to as TO-66.
The NTE175 transistor is designed for through-hole mounting.