| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE172A is a silicon NPN Darlington transistor housed in a TO-92 package. It is specifically designed for preamplifier input stages that require high input impedances or extremely low-level, high-gain, low-noise amplification.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 300mA. The DC current gain (hFE) ranges from 7000 to 70000 at 2mA/5V and 20000 minimum at 100mA/5V. The transistor exhibits a collector-emitter saturation voltage (VCE(sat)) of 1.4V maximum at 200mA/200µA.
With an operating junction temperature range of -65°C to 125°C and a total power dissipation of 400mW at 25°C, the NTE172A is suitable for various applications. Its TO-92 package and through-hole mounting type make it easy to integrate into circuit designs.
This transistor is designed for applications requiring high gain and low noise, such as in preamplifier circuits. The Darlington configuration provides a significant current gain advantage.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the NTE172A transistor is 40V.
The NTE172A has a continuous collector current (IC) rating of 300mA.
The NTE172A transistor is supplied in a TO-92 package.
The operating junction temperature range for the NTE172A is -65°C to 125°C.
The DC current gain (hFE) of the NTE172A is between 7000 and 70000 at 2mA/5V.
The collector-emitter saturation voltage (VCE(sat)) for the NTE172A is a maximum of 1.4V at 200mA/200µA.