| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE17 is a silicon PNP transistor manufactured by NTE Electronics, suitable for general-purpose amplification applications. It offers low noise characteristics and low output capacitance, making it a versatile component for various electronic circuits.
Key electrical specifications include a collector-emitter breakdown voltage of 40V and a collector current rating of 100mA. The DC current gain (hFE) ranges from 270 to 560 under typical test conditions. Its transition frequency (fT) is 140MHz, and the output capacitance (Cob) is rated up to 5pF.
This transistor is housed in a TO-92 package, commonly used for through-hole mounting. The operating junction temperature can reach up to 125°C, with a storage temperature range of -55°C to +125°C. The NTE17 is designed for applications requiring reliable amplification with low noise performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (V(BR)CEO) for the NTE17 is 40V.
The maximum collector current (IC) for the NTE17 is 100mA.
The transition frequency (fT) of the NTE17 is 140MHz.
The output capacitance (Cob) of the NTE17 is a maximum of 5pF.
The DC current gain (hFE) of the NTE17 ranges from 270 to 560.
The NTE17 transistor is supplied in a TO-92 package.