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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE162 is a high-power NPN bipolar junction transistor (BJT) from NTE Electronics, suitable for demanding applications such as TV vertical deflection circuits. This transistor features a maximum collector-emitter voltage (Vce) of 325V and a continuous collector current (Ic) of 10A, with a power dissipation capability of 125W. It operates within a temperature range of -65°C to 150°C (TJ).
The NTE162 is housed in a TO-3 (TO-204AA) package, designed for through-hole mounting, which facilitates heat dissipation. Key electrical characteristics include a minimum DC current gain (hFE) of 15 at 2.5A and 5V, and a Vce saturation of 700mV maximum at 500mA and 2.5A. Its frequency response extends to 2.5MHz.
This component is specified with RoHS3 compliance and an MSL 1 rating, indicating unlimited shelf life under standard conditions. The REACH status is listed as unaffected. The NTE162 is an ideal choice for designers requiring a robust NPN transistor for power switching and amplification tasks in television and other high-voltage applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) for the NTE162 is 325V.
The NTE162 has a continuous collector current rating of 10A.
The NTE162 transistor can dissipate up to 125W of power.
The NTE162 is supplied in a TO-3 (TO-204AA) package and is designed for through-hole mounting.
The operating temperature range for the NTE162 is -65°C to 150°C (TJ).