| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
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1 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The NTE16006 is a single NPN bipolar transistor manufactured by NTE Electronics. It is designed for through-hole mounting and comes in a 3-SIP package.
Key electrical specifications include a collector-emitter breakdown voltage of 20V and a maximum continuous collector current of 700mA. The transistor has a maximum power dissipation of 1W and a transition frequency of 55MHz. Its DC current gain (hFE) is a minimum of 1000 at 150mA and 10V, with a Vce saturation of 400mV maximum at 50mA/500mA.
The operating temperature range for this component is up to 150°C (TJ). The current cutoff is a maximum of 10μA.
This transistor is suitable for various general-purpose amplification and switching applications where its specific voltage, current, and frequency characteristics are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 20V.
The maximum collector current is 700mA.
The maximum power dissipation is 1W.
The transition frequency is 55MHz.
The minimum DC current gain (hFE) is 1000 at 150mA and 10V.
The Vce saturation is a maximum of 400mV at 50mA and 500mA.
The maximum operating temperature is 150°C (TJ).