| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Voltage |
The NTE16003 is an NPN Silicon RF Power Transistor manufactured by NTE Electronics. This component is designed for RF power amplification and driver applications.
Key electrical specifications include a collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 1.5A. It operates at frequencies up to 500MHz and has a power dissipation rating of 11.6W. The transistor is specified for RF power output of 7W at 175MHz and 7.5 Watts at 100MHz.
This RF power transistor is housed in a TO-60 package and features a stud mount type for secure installation. The operating temperature range is -65°C to 200°C (TJ).
The NTE16003 employs a multi-emitter electrode design, which contributes to its high RF current handling capability, high power gain, low base resistance, and low output capacitance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the NTE16003 is 40V.
The continuous collector current (IC) for the NTE16003 is 1.5A.
The NTE16003 operates at frequencies up to 500MHz.
The power dissipation for the NTE16003 is 11.6W.
The operating temperature range for the NTE16003 is -65°C to 200°C (TJ).
The NTE16003 is supplied in a TO-60 package.
The RF power output (PO) for the NTE16003 is 7W at 175MHz.