| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE16001 is an NPN bipolar junction transistor manufactured by NTE Electronics. This component is designed for through-hole mounting and comes in a 3-SIP package. It offers a collector-emitter breakdown voltage of 35V and a maximum collector current of 50mA. The transistor has a maximum power dissipation of 600mW and a transition frequency of 500MHz.
Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 10mA and 10V, and a Vce saturation of 500mV maximum at 2mA base current and 20mA collector current. The operating temperature range is up to 150°C (TJ). The NTE16001 is RoHS3 compliant and has an MSL rating of 1.
This transistor is suitable for various general-purpose amplification and switching applications where its specific voltage and current ratings are appropriate. Its through-hole mounting makes it easy to integrate into breadboard prototypes or traditional PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 35V.
The maximum collector current is 50 mA.
The operating temperature is up to 150°C (TJ).
The NTE16001 is supplied in a 3-SIP package.
The NTE16001 is designed for through-hole mounting.
The minimum DC current gain (hFE) is 20 at 10mA collector current and 10V collector-emitter voltage.