BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The NTE16 is a general-purpose silicon complementary transistor manufactured by NTE Electronics. Designed for low noise applications, it features low collector saturation voltage and low output capacitance.
Key electrical characteristics include a collector-emitter breakdown voltage of 40V and a collector current of up to 100mA. The DC current gain (hFE) ranges from 270 to 560 at 1mA collector current and 6V VCE. The transition frequency (fT) is 140MHz under typical test conditions.
This transistor is housed in a TO-92 package, suitable for through-hole mounting. It operates within a junction temperature range of -55°C to +125°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector-Emitter Breakdown Voltage (V(BR)CEO) for the NTE16 is 40V at 1mA.
The maximum Collector Current (IC) for the NTE16 is 100mA.
The DC Current Gain (hFE) for the NTE16 is between 270 and 560 when tested at VCE = 6V and IC = 1mA.
The Transition Frequency (fT) for the NTE16 is 140MHz under test conditions of VCE = 12V and IE = 2mA.
The NTE16 transistor is supplied in a TO-92 package.
The operating junction temperature for the NTE16 ranges from -55°C to +125°C.