| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Supplier Package | |
| Transistor Type | |
| Voltage |
The NTE Electronics NTE158 is a single PNP bipolar junction transistor (BJT) housed in a TO-1 metal can package. This through-hole component is rated for a maximum collector-emitter breakdown voltage of 32V and can handle a continuous collector current of 1A. It offers a power dissipation of 550 mW and a minimum DC current gain (hFE) of 50 at 300mA and 1V.
Designed for through-hole mounting, the NTE158 is suitable for various electronic circuits requiring a PNP switching or amplification element. Its specifications make it a reliable choice for applications where moderate voltage and current handling are necessary. The TO-1 package is a standard form factor for discrete components.
This transistor is specified with a RoHS3 compliance status, an MSL 1 rating, and is REACH unaffected. These environmental attributes are important considerations for manufacturing and assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE158 transistor has a collector-emitter breakdown voltage of 32V.
The NTE158 transistor can handle a maximum continuous collector current of 1A.
The minimum DC current gain (hFE) for the NTE158 is 50 at 300mA collector current and 1V collector-emitter voltage.
The NTE158 transistor is supplied in a TO-1-3 Metal Can package.
The NTE158 transistor is designed for through-hole mounting.