| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE155 is a single NPN bipolar junction transistor (BJT) manufactured by NTE Electronics. It is designed for general-purpose applications requiring a voltage rating of up to 32V and a continuous collector current of up to 1A.
Key electrical characteristics include a maximum collector-emitter saturation voltage of 80mV at 100mA/1A and a minimum DC current gain (hFE) of 36 at 1A/0V. The transistor has a maximum power dissipation of 6W and an operating temperature up to 90°C (TJ).
This component is supplied in a TO-66 package, suitable for through-hole mounting. The NTE155 is RoHS3 compliant, indicating adherence to environmental standards for hazardous substances.
This transistor is a reliable choice for various electronic circuits requiring amplification or switching capabilities within its specified parameters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 32V.
The maximum continuous collector current is 1A.
The minimum DC current gain (hFE) is 36 at 1A, 0V.
The maximum operating temperature is 90°C (TJ).
The NTE155 is supplied in a TO-66 package.
The NTE155 is RoHS3 Compliant.