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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
This NTE Electronics NTE154 is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. It offers a maximum collector-emitter breakdown voltage of 300V and can handle up to 1W of power.
The transistor is designed for through-hole mounting and comes in a TO-39 package, also known as TO-205AD. Key electrical characteristics include a DC current gain (hFE) of at least 40 at 30mA and 20V, and a Vce saturation of 1V maximum at 2mA collector current and 0.2mA base current. The leakage current (ICBO) is rated at 100nA.
With an operating frequency of 50MHz and an operating temperature range up to 200°C, this component is suitable for moderate frequency applications within demanding thermal environments. The RoHS status is compliant, and it has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE154 transistor has a maximum collector-emitter breakdown voltage of 300V.
The NTE154 transistor has a power rating of 1W.
The NTE154 transistor can operate in temperatures up to 200°C.
The NTE154 transistor is supplied in a TO-205AD, TO-39-3 Metal Can package, commonly referred to as TO-39.
The NTE154 transistor is designed for through-hole mounting.