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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Collector-Base Voltage | |
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| Current Rating | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Min Operating Temperature | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE153 is a PNP silicon transistor manufactured by NTE Electronics. It is designed for general purpose medium power switching and amplifier applications. This transistor features a collector-emitter voltage of up to 90V and a continuous collector current rating of 4A.
The NTE153 is housed in a standard TO-220 package, suitable for through-hole mounting. Key electrical characteristics include a maximum power dissipation of 40W and an operating temperature range from -55°C to 150°C. The transistor type is PNP, with a DC current gain (hFE) of 40 at 500mA and 5V, and a collector-emitter saturation voltage of 1.5V maximum at 3A collector current and 300mA base current.
This component is well-suited for various electronic circuits requiring reliable switching and amplification capabilities. Its complementary NPN counterpart is the NTE152. The device operates within a frequency range of 8MHz.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE153 is a PNP transistor.
The NTE153 can handle a continuous collector current of 4A.
The NTE153 has a maximum collector-emitter voltage rating of 90V.
The NTE153 is supplied in a TO-220-3 package.
The NTE153 is designed for through-hole mounting.
The NTE153 can operate at temperatures up to 150°C.