| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Voltage |
The NTE15 is a silicon NPN transistor manufactured by NTE Electronics, suitable for RF applications such as VHF mixers, oscillators, and UHF oscillators. It features a high transition frequency (fT) of up to 1.1GHz, low base resistance, high gain, and excellent noise characteristics.
Key electrical specifications include a collector-emitter voltage (VCEO) of 19V and a continuous collector current (IC) of 50mA. The device has a maximum power dissipation (PC) of 300mW and a junction temperature (TJ) of up to 125°C. The DC current gain (hFE) is a minimum of 39 at 5mA and 10V.
Packaged in a 3-SIP (Single In-line Package) with a through-hole mounting type, the NTE15 is designed for general-purpose RF amplification and oscillation circuits. Its operating temperature range is from -55°C to +125°C.
This transistor is a reliable choice for designers working on high-frequency circuits requiring stable performance and good noise figures.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NTE15 transistor is 19V.
The transition frequency (fT) of the NTE15 transistor is up to 1.1GHz.
The DC current gain (hFE) of the NTE15 transistor is a minimum of 39 at 5mA collector current and 10V collector-emitter voltage.
The NTE15 transistor is available in a 3-SIP package.
The operating temperature range for the NTE15 transistor is -55°C to +125°C.