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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE131 is a single PNP bipolar junction transistor (BJT) manufactured by NTE Electronics. It is designed for through-hole mounting and comes in a TO-66 package.
Key electrical characteristics include a maximum collector-emitter voltage of 32V and a continuous collector current of 1A. The transistor has a minimum DC current gain (hFE) of 36 at 1A and 0V, with a Vce saturation of 80mV maximum at 100mA and 1A.
With a power dissipation rating of 6W, the NTE131 is suitable for various general-purpose amplification and switching applications. The operating junction temperature can reach up to 90°C.
This component is classified under Transistors - Bipolar (BJT) - Single and is part of the discrete semiconductor products category.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE131 transistor has a maximum operating voltage of 32V.
The NTE131 transistor is supplied in a TO-213AA, TO-66-2 package, also referred to as TO-66.
The maximum operating junction temperature for the NTE131 transistor is 90°C.
The NTE131 transistor is RoHS3 Compliant.