| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Power Dissipation |
The NTE1287 is a silicon NPN transistor manufactured by NTE Electronics, housed in a TO-39 package. It is primarily designed for amplifier and switching applications.
Key electrical specifications include a maximum collector current of 1A, a collector-base voltage of 140V, and a collector-emitter voltage of 80V. The device also offers a maximum frequency of 400MHz and a maximum power dissipation of 1W.
This transistor is characterized by high breakdown voltages, low leakage currents, and low capacity. Its beta is useful over an extremely wide current range, making it suitable for various electronic designs. The operating temperature range is from -65°C to 200°C.
The NTE1287 is mounted through hole and has 3 terminals. Its complementary PNP counterpart is the NTE129.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-65°C to 200°C
TO-39
Collector-emitter: 80V, collector-base: 140V, emitter-base: 7V
1A
400MHz
1W
500mV