NTE126 The NTE Electronics NTE126 is a Germanium PNP transistor designed for high-speed switching applications. It features a TO-18 package and operates up to 15V.
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NTE126

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Mfr Name: NTE Electronics
NTE Electronics
The NTE Electronics NTE126 is a Germanium PNP transistor designed for high-speed switching applications. It features a TO-18 package and operates up to 15V.
✓ Total Stock: 2 pcs
$ Price Range: $0.99

NTE126 Available from 1 distributor

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2 pcs
2 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request

NTE126 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NTE126 Description

Short technical summary and product information.

The NTE Electronics NTE126 is a Germanium PNP transistor specifically designed for high-speed switching applications. It comes in a standard TO-18 type package, also known as TO-206AA, with through-hole mounting.

 

This transistor offers a collector-emitter voltage of up to 15Vdc and a collector-base voltage of 15Vdc, with an emitter-base voltage limit of 2.5Vdc. The device has a total power dissipation of 150mW at 25°C ambient temperature, derating at 2.0mW/°C above 25°C. When operated at 25°C case temperature, the power dissipation increases to 300mW, derating at 4.0mW/°C.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 40 at various current levels. The collector-emitter saturation voltage (VCE(sat)) is specified at a maximum of 0.18V at 10mA/1mA, up to 0.60V at 100mA/10mA. The current-gain-bandwidth product (fT) is 300MHz, and output capacitance (Cob) is a maximum of 4.0pF. Switching times are also detailed, with turn-on time at 50ns and turn-off time at 85ns.

 

The operating and storage junction temperature range for the NTE126 is from -65°C to +100°C. This transistor is suitable for applications requiring fast switching speeds and reliable performance within its specified parameters.

NTE126 Quick Information

Product Type: PNP Transistor
Canonical Name: NTE Electronics NTE126 Germanium PNP Transistor
Subcategory: Single

NTE126 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTE126 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTE126 Features

  • Germanium PNP transistor for switching.
  • Maximum collector-emitter voltage is 15V.
  • Power dissipation rated at 150mW.
  • Bandwidth product reaches 300MHz.
  • TO-18 metal can package.

NTE126 Applications

  • Ideal for high-speed switching circuits.
  • Suitable for general-purpose amplification.
  • Used in signal processing applications.
  • Component in discrete logic designs.

NTE126 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NTE126 transistor?

The maximum collector-emitter voltage (VCE) for the NTE126 transistor is 15 Vdc.

What is the operating temperature range of the NTE126 transistor?

The operating junction temperature range for the NTE126 transistor is -65°C to +100°C.

What package type is the NTE126 transistor supplied in?

The NTE126 transistor is supplied in a TO-18 type package, also referred to as TO-206AA, Metal Can.

What is the DC current gain (hFE) of the NTE126 transistor?

The minimum DC current gain (hFE) for the NTE126 transistor is 40 at 100mA collector current and 1V collector-emitter voltage.

What is the current-gain-bandwidth product (fT) for the NTE126?

The current-gain-bandwidth product (fT) for the NTE126 is a minimum of 300 MHz.

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