| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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936 pcs
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936 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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This NTE123AP is an NPN bipolar junction transistor (BJT) manufactured by NTE Electronics. It is designed for general-purpose amplification and switching applications.
The transistor features a maximum collector-emitter voltage of 40V and a continuous collector current of up to 600mA. Its power dissipation is rated at 625mW, with a transition frequency of 250MHz. The DC current gain (hFE) is a minimum of 100 at 150mA and 1V, and the Vce saturation is a maximum of 750mV at 50mA and 500mA.
Packaged in a standard TO-92 (TO-226-3, TO-92-3) through-hole configuration, the NTE123AP operates within a temperature range of -55°C to 150°C (TJ). Its RoHS status is listed as RoHS3 Compliant, with an MSL of 1 Unlimited and REACH Unaffected status.
This component is suitable for various electronic circuits requiring reliable NPN transistor performance in a compact package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage for the NTE123AP is 40V.
The maximum continuous collector current is 600 mA.
The operating temperature range is -55°C to 150°C (TJ).
The NTE123AP is supplied in a TO-226-3, TO-92-3 (TO-226AA) package.
The NTE123AP is mounted using the Through Hole method.