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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Base Breakdown Voltage (IC = 10μA, IE = 0) | |
| Collector Cutoff Current (VCE = 60V, IE = 0) | |
| Collector Emitter Breakdown Voltage (IC = 10mA, IB = 0) | |
| Collector Emitter Voltage (IB = 0) | |
| Collector-Base Voltage | |
| Continuous Collector Current | |
| Current | |
| Current Gain Bandwidth Product (IC = 20mA, VCE = 20V, f = 100MHz) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage @ IE=10µA, IC=0 | |
| Emitter-Base Voltage | |
| Frequency | |
| Input Capacitance (VEB = 0.5V, IC = 0, f = 100kHz) | |
| Input Impedance (IC = 1mA, VCE = 10V, f = 1kHz) | |
| Mounting Type | |
| Operating Junction Temperature | |
| Operating Temperature | |
| Output Capacitance (VCB = 10V, IE = 0, f = 100kHz) | |
| Package / Case | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Total Device Dissipation (Maximum @ @ TC = 25 °C) | |
| Total Device Dissipation (Maximum @ Ta = 25 °C) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE123 is a silicon NPN transistor manufactured by NTE Electronics, suitable for general purpose audio amplifier and switch applications. It features a collector-emitter voltage of 40V and a continuous collector current of 800mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 10V. The transistor has a current gain-bandwidth product (fT) of 300MHz. Its output capacitance (Cobo) is a maximum of 8pF, and input capacitance (Cibo) is a maximum of 25pF.
The NTE123 is housed in a TO-205AD, TO-39-3 Metal Can package, designed for through-hole mounting. It operates across a wide temperature range from -65°C to +200°C (TJ).
This transistor is specified with a total device dissipation of 800mW at 25°C ambient temperature, derating at 5.33mW/°C above 25°C. When operated at a case temperature of 25°C, the total device dissipation is 3.0W, derating at 20mW/°C above 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the NTE123 is 40V.
The NTE123 can handle a continuous collector current (IC) of 800mA.
The operating junction temperature range (TJ) for the NTE123 is -65°C to +200°C.
The NTE123 is supplied in a TO-205AD, TO-39-3 Metal Can package.
The NTE123 transistor is designed for through-hole mounting.
The minimum DC current gain (hFE) for the NTE123 at 150mA and 10V is 100.
The current gain-bandwidth product (fT) for the NTE123 is 300MHz.