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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE121 is a single PNP bipolar junction transistor manufactured by NTE Electronics. It is designed for power applications, featuring a maximum voltage rating of 45V and a continuous current capability of 10A. The transistor dissipates up to 90W of power.
This device comes in a TO-3 package, also known as TO-204AA, and is designed for through-hole mounting. Its operating temperature is rated up to 100°C (TJ). The DC current gain (hFE) is a minimum of 50 at 1A and 2V, with a Vce saturation of 300mV maximum at 1A and 10A.
The NTE121 operates at frequencies up to 300kHz. It is listed with RoHS3 compliance, MSL 1, and REACH Unaffected status, though these compliance details are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE121 transistor has a maximum voltage rating of 45V.
The NTE121 can handle a continuous current of up to 10A.
The NTE121 transistor has a power dissipation of 90W.
The operating temperature for the NTE121 is up to 100°C (TJ).
The NTE121 is available in a TO-3 package, also known as TO-204AA.
The NTE121 transistor is designed for through-hole mounting.