| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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This NTE108-1 is an NPN silicon RF transistor manufactured by NTE Electronics. It is designed for RF and IF amplifier applications.
The transistor features a maximum operating voltage of 15V and a continuous current of 50mA. It offers a maximum power dissipation of 625mW and operates at frequencies up to 600MHz. The DC current gain (hFE) is a minimum of 20 at 8mA and 10V, with a typical noise figure of 6dB at 60MHz and a gain of 15dB.
Packaged in a TO-106 configuration, this component is designed for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE108-1 has a maximum operating voltage of 15V.
The NTE108-1 is supplied in a TO-106-3 Domed package.
The operating temperature range for the NTE108-1 is -55°C to 150°C (TJ).
The NTE108-1 is RoHS3 Compliant.