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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE106 is a Silicon PNP Transistor designed for switching applications, manufactured by NTE Electronics. It features a collector-emitter voltage (VCEO) of 15V and a collector-base voltage (VCBO) of 15V.
Key electrical characteristics include a continuous collector current (IC) of 200mA. The device has a DC current gain (hFE) ranging from 35 to 120 depending on the test conditions. Saturation voltages are low, with VCE(sat) typically 0.15V at 1mA and 0.18V at 10mA.
Thermal specifications include a total device dissipation (PD) of 0.36W at 25°C ambient temperature and 1.2W at 25°C case temperature. The operating and storage temperature range is -65°C to +200°C.
This transistor is suitable for various electronic switching circuits where a PNP type is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NTE106 is 15V.
The NTE106 has a continuous collector current (IC) rating of 200mA.
The NTE106 operates and can be stored within a temperature range of -65°C to +200°C.
The DC Current Gain (hFE) of the NTE106 is typically 50 and can be up to 120 at an IC of 10mA and VCE of 300mV.
The Collector-Emitter Saturation Voltage (VCE(sat)) for the NTE106 is a maximum of 0.18V when IC is 10mA and IB is 1mA.