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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NTE Electronics NTE104 is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It features a collector-emitter breakdown voltage of 35V and can handle a maximum collector current of 10A.
The transistor has a maximum power dissipation of 90W and a transition frequency of 300kHz. Its DC current gain (hFE) is a minimum of 50 at 20mA and 2V. The saturation voltage (Vce Saturation) is a maximum of 290mV at 400mA and 4A.
Designed for through-hole mounting, the NTE104 comes in a TO-204AA, TO-3 package. It operates at a junction temperature up to 100°C.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are currently unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage for the NTE104 is 35V.
The NTE104 transistor has a maximum collector current of 10A.
The maximum power dissipation for the NTE104 is 90W.
The operating temperature for the NTE104 is up to 100°C (TJ).
The NTE104 is supplied in a TO-204AA, TO-3 package.
The NTE104 transistor is mounted using the through-hole method.