| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE101 is a germanium NPN bipolar transistor manufactured by NTE Electronics. It is suitable for use as an oscillator, mixer for AM radio, and as a medium-speed switch.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 25V and a maximum collector current (IC) of 300mA. The device has a maximum total power dissipation (PD) of 150mW and an operating junction temperature (TJ) of up to 85°C.
This transistor comes in a TO-5 metal can package and is designed for through-hole mounting. It offers a typical DC current gain (hFE) of 100 at 10mA and 1V, with a Vce saturation voltage of 0.20V maximum at 500µA base current and 10mA collector current.
The NTE101 is complementary to the NTE100 PNP transistor, allowing for complementary circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NTE101 is 25V.
The maximum collector current (IC) for the NTE101 is 300mA.
The NTE101 transistor is available in a TO-5 metal can package.
The operating junction temperature (TJ) for the NTE101 is a maximum of 85°C.
The typical DC current gain (hFE) of the NTE101 at 10mA and 1V is 100.
The maximum collector-emitter saturation voltage (Vce(sat)) for the NTE101 at 500µA and 10mA is 0.20V.