| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
833 pcs
|
833 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
418 pcs
|
418 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTDV20N06T4G-VF01 is a single N-Channel MOSFET with a drain-source voltage (Vdss) of 60V. It is designed for surface mount applications and comes in a TO-252-3, DPak package.
Key electrical characteristics include a maximum continuous drain current of 20A and a maximum Rds On of 46mOhm at 10A and 10V. The gate charge (Qg) is 30 nC at 10V, and the gate-source threshold voltage (Vgs(th)) is 4V at 250µA. The device operates within a temperature range of -55°C to 175°C.
This MOSFET utilizes Metal Oxide technology and is suitable for applications requiring efficient switching and power handling. Its surface mount package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 60V.
The continuous drain current is 20A.
The Rds On is a maximum of 46mOhm at 10A and 10V.
The operating temperature range is -55°C to 175°C.
It is in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
It is a surface mount device.