NTDV20N06LT4G-VF01 The ON Semiconductor NTDV20N06LT4G-VF01 is an N-Channel MOSFET with a 60V drain-source voltage and 20A continuous drain current. It is housed in a TO-252-3 DPAK surface mount package.
Mfr Part #:

NTDV20N06LT4G-VF01

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTDV20N06LT4G-VF01 is an N-Channel MOSFET with a 60V drain-source voltage and 20A continuous drain current. It is housed in a TO-252-3 DPAK surface mount package.
✓ Total Stock: 3,943 pcs
$ Price Range: $0.99

NTDV20N06LT4G-VF01 Available from 1 distributor

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NTDV20N06LT4G-VF01 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTDV20N06LT4G-VF01 Description

Short technical summary and product information.

This N-Channel MOSFET from ON Semiconductor, part number NTDV20N06LT4G-VF01, is designed for various electronic applications requiring efficient power switching. It features a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 20A.

 

The MOSFET exhibits a low drain-source on-resistance (Rds On) of 46mOhm at 10A and 10V, ensuring minimal power loss during operation. The gate charge (Qg) is a maximum of 30nC at 10V, and the input capacitance (Ciss) is 1015pF at 25V. The gate source threshold voltage (Vgs(th)) is 4V at 250µA, with a maximum gate source voltage of ±20V.

 

Operating within a temperature range of -55°C to 175°C, this device is suitable for demanding environments. It is constructed using MOSFET (Metal Oxide) technology and comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting. The power dissipation is rated at 1.88W (Ta).

 

This component is RoHS3 compliant and has an MSL rating of 1 Unlimited, indicating its suitability for a wide range of industrial and commercial applications.

NTDV20N06LT4G-VF01 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

NTDV20N06LT4G-VF01 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTDV20N06LT4G-VF01 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTDV20N06LT4G-VF01 Features

  • 60V drain-source breakdown voltage.
  • 20A continuous drain current.
  • Low 46mOhm Rds On at 10A, 10V.
  • TO-252-3 DPAK surface mount package.
  • RoHS3 compliant and MSL 1 Unlimited.

NTDV20N06LT4G-VF01 Applications

  • Suitable for power switching circuits.
  • Ideal for industrial applications.
  • Used in general purpose electronics.
  • Efficient power management designs.

NTDV20N06LT4G-VF01 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NTDV20N06LT4G-VF01?

The maximum drain-source voltage (Vds) is 60V.

What is the continuous drain current rating?

The continuous drain current (Id) is 20A.

What is the Rds On resistance?

The Rds On is a maximum of 46mOhm at 10A and 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C.

What package type is the NTDV20N06LT4G-VF01?

It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package for surface mounting.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 compliant.

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