| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,947 pcs
|
5947 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTDV20N06LT4G from On Semiconductor is a power MOSFET designed for low voltage, high-speed switching applications. It is an N-Channel, Logic Level MOSFET suitable for use in power supplies, converters, and power motor controls.
Key electrical specifications include a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C ambient temperature. The Rds On is specified at a maximum of 48mOhm at 10A and 5V gate-source voltage. The gate threshold voltage (Vgs(th)) is 2V maximum at 250µA.
This MOSFET operates over a wide temperature range of -55°C to 175°C. It is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package. The device is designed for applications requiring efficient power management and switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
The continuous drain current (Id) is 20A at 25°C ambient temperature.
The Rds On is a maximum of 48mOhm at 10A and 5V gate-source voltage.
The operating and storage temperature range is -55°C to 175°C.
The NTDV20N06LT4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.
Yes, the NTDV20N06LT4G is RoHS3 Compliant.