| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,400 pcs
|
2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTD85N02RT4 is an N-Channel MOSFET manufactured by On Semiconductor. This component is designed for applications requiring efficient power switching. It offers a Drain-to-Source Voltage (Vdss) of 24V and a continuous drain current rating of 12A at ambient temperature and 85A at case temperature.
The MOSFET utilizes a Metal Oxide technology and is housed in a Surface Mount DPAK package (TO-252-3, SC-63). Key electrical characteristics include a low on-resistance of 5.2mOhm at 20A and 10V, a gate charge of 17.7 nC at 5V, and an input capacitance of 2050 pF at 20V. The operating temperature range is from -55°C to 150°C (TJ).
With its robust specifications, the NTD85N02RT4 is suitable for various power management tasks, including CPU power delivery, DC-DC converters, and low-side switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-to-Source Voltage (Vdss) is 24 V.
The continuous drain current is 12A at ambient temperature and 85A at case temperature.
The operating temperature range is -55°C to 150°C (TJ).
It is available in a Surface Mount DPAK package (TO-252-3, SC-63).
The RoHS status is RoHS3 Compliant.