| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
703 pcs
|
703 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTD80N02T4G is an N-Channel MOSFET designed for low voltage, high-speed switching applications. It offers a drain-source voltage (Vdss) of 24V and a continuous drain current of 80A.
Key electrical characteristics include a low on-resistance (Rds On) of 5.8mOhm at 80A and 10V Vgs, and a gate charge (Qg) of 42nC at 4.5V Vgs. The threshold voltage (Vgs(th)) is 3V at 250µA.
This MOSFET is housed in a DPAK (TO-252-3) surface mount package, suitable for applications requiring efficient power handling in a compact form factor. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 75W.
The NTD80N02T4G is designed for use in power supplies, converters, and power motor controls.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the NTD80N02T4G is 24V.
The continuous drain current rating is 80A.
The Rds On (Max) is 5.8mOhm at 80A and 10V.
The operating temperature range is -55°C to 150°C (TJ).
The NTD80N02T4G is in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.