NTD6600NT4 The On Semiconductor NTD6600NT4 is an N-Channel MOSFET designed for power switching applications. It features a 100V drain-source voltage and a 12A continuous drain current.
Mfr Part #:

NTD6600NT4

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTD6600NT4 is an N-Channel MOSFET designed for power switching applications. It features a 100V drain-source voltage and a 12A continuous drain current.
✓ Total Stock: 2,200 pcs
$ Price Range: $0.99

NTD6600NT4 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,200 pcs
2200 pcs On Request 1 On Request On Request 05+ On Request On Request

NTD6600NT4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTD6600NT4 Description

Short technical summary and product information.

The NTD6600NT4 from On Semiconductor is an N-Channel Power MOSFET. It is designed for applications requiring high voltage and current handling capabilities. This MOSFET features a maximum drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 12A at ambient temperature.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2V at 250µA and a maximum on-resistance (Rds On) of 146mOhm at 6A and 5V gate-source voltage. The input capacitance (Ciss) is rated at 700pF at 25V, and the gate charge (Qg) is a maximum of 20nC at 5V.

 

This device operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 1.28W at ambient temperature and 56.6W at case temperature. The technology used is MOSFET (Metal Oxide).

 

The NTD6600NT4 is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. The supplier package code is DPAK.

NTD6600NT4 Quick Information

Product Type: MOSFET
Canonical Name: NTD6600NT4 N-Channel MOSFET
Subcategory: MOSFET

NTD6600NT4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTD6600NT4 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTD6600NT4 Features

  • 100V drain-source voltage rating.
  • 12A continuous drain current.
  • Low Rds On resistance.
  • Surface mount DPAK package.
  • Wide operating temperature range.

NTD6600NT4 Applications

  • Ideal for power switching circuits.
  • Suitable for DC-DC converters.
  • Used in motor control applications.
  • Applicable in power supply designs.

NTD6600NT4 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NTD6600NT4?

The maximum drain-source voltage (Vdss) for the NTD6600NT4 is 100V.

What is the continuous drain current of the NTD6600NT4?

The continuous drain current (Id) for the NTD6600NT4 is 12A at ambient temperature.

What is the Rds On resistance of the NTD6600NT4?

The Rds On resistance is a maximum of 146mOhm at 6A drain current and 5V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the NTD6600NT4 supplied in?

The NTD6600NT4 is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

How is the NTD6600NT4 mounted?

The NTD6600NT4 is a surface mount device.

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