| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,817 pcs
|
4817 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
1,420 pcs
|
1420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTD6416ANLT4G from ON Semiconductor is a robust N-Channel Power MOSFET. It offers a drain-to-source voltage (Vdss) of 100V and a continuous drain current capability of 19A at 25°C case temperature. The MOSFET exhibits a low on-resistance of 74mOhm at 19A and 10V gate-source voltage, minimizing conduction losses.
Designed for efficient power management, this device operates within a wide temperature range of -55°C to 175°C. It is housed in a surface-mount TO-252-3, DPak (2 Leads + Tab), SC-63 package, making it suitable for various electronic designs where space is a consideration. The MOSFET technology ensures fast switching speeds and high current handling capabilities.
Key electrical characteristics include a gate-to-source voltage range of ±20V and a gate threshold voltage of 2.2V maximum at 250µA. The device also features a gate charge of 40nC at 10V and an input capacitance of 1000pF at 25V. With a maximum power dissipation of 71W at 25°C case temperature, it is well-suited for demanding power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 100V.
The maximum continuous drain current is 19A at 25°C case temperature.
The on-resistance (Rds On) is a maximum of 74mOhm at 19A drain current and 10V gate-source voltage.
The operating and storage temperature range is -55°C to 175°C.
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
Yes, the device is RoHS3 Compliant.